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ZXT13P20DE6
SuperSOT4TM 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY VCEO=-20V; RSAT = 47m ; IC= -3.5A
DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES * * * * * * * * * Extremely Low Equivalent On Resistance Extremely Low Saturation Voltage hFE characterised up to 10A IC=3.5A Continuous Collector Current SOT23-6 package
SOT23-6
APPLICATIONS DC - DC Converters Power Management Functions Power switches Motor control
ORDERING INFORMATION DEVICE ZXT13P20DE6TA ZXT13P20DE6TC DEVICE MARKING P20D REEL SIZE (inches) 7 13 TAPE WIDTH (mm) 8mm embossed 8mm embossed QUANTITY PER REEL 3000 units
C C B
Top View
C C E
10000 units
ISSUE 1 - DECEMBER 1999 1
ZXT13P20DE6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at TA=25C (a) Linear Derating Factor Power Dissipation at TA=25C (b) Linear Derating Factor Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC IB PD LIMIT -25 -20 -7.5 -10 -4 -500 1.1 8.8 1.7 13.6 -55 to +150 UNIT V V V A A mA W mW/C W mW/C C
PD
T j :T stg
THERMAL RESISTANCE
PARAMETER Junction to Ambient (a) Junction to Ambient (b) SYMBOL R JA R JA VALUE 113 73 UNIT C/W C/W
NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t 5 secs.
ISSUE 1 - DECEMBER 1999 2
ZXT13P20DE6
TYPICAL CHARACTERISTICS
1.2
Max Power Dissipation (W)
IC Collector Current (A)
10
1.0 0.8 0.6 0.4 0.2 0.0
1
DC 1s 100ms 10ms 1ms 100s Single Pulse Tamb=25C
100m
10m 100m
1
10
0
20
40
60
80
100
120
140
160
VCE Collector-Emitter Voltage (V)
Temperature (C)
Safe Operating Area
Derating Curve
120
Thermal Resistance (C/W)
100 80 60 40 20
D=0.1 D=0.5
Single Pulse D=0.2 D=0.05
0 100
1m
10m
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
ISSUE 1 - DECEMBER 1999 3
ZXT13P20DE6
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V (BR)CBO V (BR)CEO V (BR)EBO I CBO I EBO I CES V CE(sat) -10 -100 -165 MIN. -25 -20 -7.5 TYP. -55 -50 -8.5 -100 -100 -100 -15 -130 -250 -1.1 -0.9 300 300 200 20 500 450 300 30 90 62 95 395 900 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. I C =-100 A I C =-10mA* I E =-100 A V CB =-20V V EB =-6V V CES =-20V I C =-0.1A, I B =-10mA* I C =-1A, I B =-10mA* I C =-3.5A, I B =-350mA* I C =-3.5A, I B =-350mA* I C =-3.5A, V CE =-2V* I C =-10mA, V CE =-2V* I C =-1A, V CE =-2V* I C =-4A, V CE =-2V* I C =-10A, V CE =-2V* MHz pF ns ns I C =-50mA, V CE =-10V f=50MHz V CB =-10V, f=1MHz V CC =-10V, I C =-2A I B1 =I B2 =-40mA
V BE(sat) V BE(on) h FE
Transition Frequency Output Capacitance Turn-On Time Turn-Off Time
fT C obo t (on) t (off)
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
ISSUE 1 - DECEMBER 1999 4
ZXT13P20DE6
TYPICAL CHARACTERISTICS
0.25
Tamb=25C IC/IB=50
100m
0.20
IC/IB=100
VCE(SAT) (V)
VCE(SAT) (V)
0.15
100C
10m
IC/IB=50 IC/IB=10
0.10
25C
0.05
-55C
1m 1m
10m
100m
1
10
0.00 1m
IC Collector Current (A)
10m 100m 1 IC Collector Current (A)
10
VCE(SAT) v IC
VCE(SAT) v IC
1.6 1.4
100C
VCE=2V
1.0
IC/IB=50
Normalised Gain
1.2 1.0 0.8 0.6 0.4 0.2 0.0 1m 10m 100m 1 10
-55C 25C
-55C
VBE(SAT) (V)
0.8
25C
0.6
100C
0.4 1m 10m 100m 1 10
IC Collector Current (A)
IC Collector Current (A)
hFE v IC
VBE(SAT) v IC
1.0
VCE=2V
VBE(ON) (V)
0.8
-55C
0.6
25C
100C
0.4 1m 10m 100m 1 IC Collector Current (A) 10
VBE(ON) v IC
ISSUE 1 - DECEMBER 1999 5
ZXT13P20DE6
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
b
e L2
E
E1
e1 D
a
DATUM A
C
A
A2
A1
DIM Millimetres Min A A1 A2 b C D E E1 L e e1 L 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0.10 0.95 REF 1.90 REF
0
Inches Min 0.35 0 0.035 0.014 0.0035 0.110 0.102 0.059 0.004 0.037 REF 0.074 REF Max 0.057 0.006 0.051 0.019 0.008 0.118 0.118 0.069 0.002
Max 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 0.60
10
0
10
Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (631) 543-7100 Fax: (631) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide (c) Zetex plc 1999 Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - DECEMBER 1999 6

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